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ADN2821XCHIP-02KWP Datasheet(PDF) 3 Page - Analog Devices |
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ADN2821XCHIP-02KWP Datasheet(HTML) 3 Page - Analog Devices |
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3 / 8 page  Preliminary Technical Data ADN2821 Rev. PrL | Page 3 of 8 ELECTRICAL SPECIFICATIONS Table 1. Parameter Conditions1 Min Typ Max Units DYNAMIC PERFORMANCE Bandwidth (BW)2 −3 dB 8 9.5 GHz Total Input RMS Noise (IRMS)2 DC to 10GHz 1.1 1.3 µA Small Signal Trans-impedance (TZ) ADN2821_2, 100 MHz 1500 2000 2500 V/A ADN2821_5, 100 MHz 3500 5000 6500 V/A ADN2821_10, 100 MHz 6000 10000 15000 V/A Trans-impedance Ripple2 50 MHz to 5 GHz ±1 dB Group Delay Variation2 50 MHz to 8 GHz ±10 ps Low Frequency Cut-Off CLF = 1000 pF 15 kHz Output Return Loss2 DC to 8 GHz, differential −12 −10 dB Total pk-pk Jitter2 IIN,PK- PK = 2.0 mA, 4 dB ER 5 TBD ps Input Overload Current3, 2 Pav, 10-12 BER, 10 dB ER TBD 3.25 dBm Maximum Output Swing p-p diff, IIN,PK- PK = 2.5mA 400 520 650 mV Linear Output Range p-p, < 1 dB gain compression 400 mV Power Supply Noise Rejection <10MHz TBD dB DC PERFORMANCE Power Dissipation IIN,AVE = 0.1 mA, Vcc = 3.3 V ± 5% 150 200 mW Input Voltage 0.85 V Output Impedance single-ended 50 Ω PD FILTER Resistance RF 200 Ω PD FILTER Capacitance CF 20 pF RSSI Sensitivity IIN, AVE = 0 uA to 1 mA 0.8 V/mA RSSI Offset IIN, AVE = 0 uA TBD mV 1 Min/Max Vcc = +3.3V ± 0.3V, Ta = −40°C to +95°C; Typ Vcc = 3.3V, Tambient = +25C 2 Photodiode capacitance CD = 0.22pF ± 0.04pF, Photodiode resistance = 15Ω, CB = 100pF Bond inductance LIN = LFILTER = 0.3nH ± 0.1nH; LOUT = LOUTB = 0.5nH ± 0.1nH Load impedance = 50Ω (each output, AC coupled) 3 10-12 BER, 10dB extinction ratio, 0.85 A/W PD responsivity |
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