Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.NET

X  

Preview PDF Download HTML

BSH201 Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BSH201
Description  P-channel enhancement mode MOS transistor
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH201 Datasheet(HTML) 1 Page - NXP Semiconductors

  BSH201 Datasheet HTML 1Page - NXP Semiconductors BSH201 Datasheet HTML 2Page - NXP Semiconductors BSH201 Datasheet HTML 3Page - NXP Semiconductors BSH201 Datasheet HTML 4Page - NXP Semiconductors BSH201 Datasheet HTML 5Page - NXP Semiconductors BSH201 Datasheet HTML 6Page - NXP Semiconductors BSH201 Datasheet HTML 7Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
Philips Semiconductors
Product specification
P-channel enhancement mode
BSH201
MOS transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low threshold voltage
V
DS = -60 V
• Fast switching
• Logic level compatible
I
D = -0.3 A
• Subminiature surface mount
package
R
DS(ON) ≤ 2.5 Ω (VGS = -10 V)
GENERAL DESCRIPTION
PINNING
SOT23
P-channel, enhancement mode,
PIN
DESCRIPTION
logic
level,
field-effect
power
transistor. This device has low
1
gate
threshold voltage and extremely
fast switching making it ideal for
2
source
battery powered applications and
high speed digital interfacing.
3
drain
The BSH201 is supplied in the
SOT23
subminiature
surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-60
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
-60
V
V
GS
Gate-source voltage
-
± 20
V
I
D
Drain current (DC)
T
a = 25 ˚C
-
-0.3
A
T
a = 100 ˚C
-
-0.19
A
I
DM
Drain current (pulse peak value)
T
a = 25 ˚C
-
-1.2
A
P
tot
Total power dissipation
T
a = 25 ˚C
-
0.417
W
T
a = 100 ˚C
-
0.17
W
T
stg, Tj
Storage & operating temperature
- 55
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction to
FR4 board, minimum
300
-
K/W
ambient
footprint
d
g
s
1
2
3
Top view
August 1998
1
Rev 1.000


Html Pages

1  2  3  4  5  6  7 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
BSH202 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
PHP1025 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
BSH203 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
PHP1035 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
BSH205 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
PHP109 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
BSH206 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
BSH207 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
PHP125 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors
BSH299 P-channel enhancement mode MOS transistor 1  2  3  4  5  More NXP Semiconductors

Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn