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BSH201 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BSH201
Description  P-channel enhancement mode MOS transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH201 Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
P-channel enhancement mode
BSH201
MOS transistor
Fig.1. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25 ˚C = f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅I
D/ID 25 ˚C = f(Ta); conditions: VGS ≤ -10 V
Fig.3. Safe operating area. T
a = 25 ˚C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-a = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 ˚C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 ˚C.
R
DS(ON) = f(ID); parameter VGS
Normalised Power Dissipation, PD (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
0.1
1
10
100
1000
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Drain Current, ID (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH201
-1
-0.8
-0.6
-0.4
-0.2
0
-2
-1.5
-1
-0.5
0
Drain-Source Voltage, VDS (V)
Drain current, ID (A)
-1.5 V
-1.9 V
VGS = -10 V
-4.5 V
-1.7 V
Tj = 25 C
-2.1 V
-2.3 V
-2.5 V
BSH201
0.001
0.01
0.1
1
10
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
d.c.
100 ms
10 ms
1 ms
RDS(on) = VDS/ ID
tp = 10us
100 us
PHP222
0
1
2
3
4
5
6
7
8
9
10
-0.5
-0.4
-0.3
-0.2
-0.1
0
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = -10 V
-2.3 V
-1.9 V
Tj = 25 C
-2.5 V
-2.1 V
-1.7 V
-1.5 V
-4.5 V
August 1998
3
Rev 1.000


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