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BSH201 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BSH201
Description  P-channel enhancement mode MOS transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH201 Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
P-channel enhancement mode
BSH201
MOS transistor
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance, T
j = 25 ˚C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 ˚C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 ˚C
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
BSH201
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-5.5
-5
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
Gate-Source Voltage, VGS (V)
VDS > ID X RDS(on)
Tj = 25 C
150 C
Drain Current, ID (A)
Threshold Voltage, VGS(to), (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
Junction Temperature, Tj (C)
minimum
typical
BSH201
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
Drain Current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID X RDS(on)
BSH201
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
-2.5
-2
-1.5
-1
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
VDS = -5 V
Tj = 25 C
Normalised Drain-Source On Resistance
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
25
50
75
100
125
150
Junction Temperature, Tj (C)
VGS = -10 V
-4.5 V
RDS(ON) @ Tj
RDS(ON) @ 25C
BSH201
1
10
100
1000
-0.1
-1.0
-10.0
-100.0
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1998
4
Rev 1.000


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