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BSH207 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BSH207
Description  P-channel enhancement mode MOS transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH207 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
P-channel enhancement mode
BSH207
MOS transistor
ELECTRICAL CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = -10 µA
-12
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = -1 mA
-0.4
-0.6
-
V
T
j = 150˚C
-0.1
-
-
V
R
DS(ON)
Drain-source on-state
V
GS = -4.5 V; ID = -1 A
-
80
120
m
resistance
V
GS = -2.5 V; ID = -1 A
-
117
150
m
V
GS = -1.8 V; ID = -0.5 A
-
140
180
m
V
GS = -2.5 V; ID = -1 A; Tj = 150˚C
-
175
230
m
g
fs
Forward transconductance
V
DS = -9.6 V; ID = -1 A
1.5
4.5
-
S
I
GSS
Gate source leakage current V
GS = ±8 V; VDS = 0 V
-
±10 ±100
nA
I
DSS
Zero gate voltage drain
V
DS = -9.6 V; VGS = 0 V;
-
-50
-100
nA
current
T
j = 150˚C
-
-13
-100
µA
Q
g(tot)
Total gate charge
I
D = -1 A; VDD = -10 V; VGS = -4.5 V
-
8.8
-
nC
Q
gs
Gate-source charge
-
0.7
-
nC
Q
gd
Gate-drain (Miller) charge
-
2.0
-
nC
t
d on
Turn-on delay time
V
DD = -10 V; ID = -1 A;
-
2
-
ns
t
r
Turn-on rise time
V
GS = -8 V; RG = 6 Ω
-
4.5
-
ns
t
d off
Turn-off delay time
Resistive load
-
45
-
ns
t
f
Turn-off fall time
-
20
-
ns
C
iss
Input capacitance
V
GS = 0 V; VDS = -9.6 V; f = 1 MHz
-
500
-
pF
C
oss
Output capacitance
-
210
-
pF
C
rss
Feedback capacitance
-
62
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
T
a = 25 ˚C
-
-
-1.52
A
current
I
DRM
Pulsed reverse drain current
-
-
-6.09
A
V
SD
Diode forward voltage
I
F = -0.62 A; VGS = 0 V
-
-0.62
-1.3
V
t
rr
Reverse recovery time
I
F = -0.5 A; -dIF/dt = 100 A/µs;
-
75
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = -9.6 V
-
69
-
nC
August 1998
2
Rev 1.000


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