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BSH299 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BSH299
Description  P-channel enhancement mode MOS transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH299 Datasheet(HTML) 4 Page - NXP Semiconductors

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1998 Feb 18
4
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = −10 µA
−50
−−
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = −1mA
−0.8
−−2V
IDSS
drain-source leakage current
VGS = 0; VDS = −40 V
−−−100
nA
VGS = 0; VDS = −50 V
−−−10
µA
VGS = 0; VDS = −50 V; Tj = 125 °C −−−60
µA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
−−±10
nA
RDSon
drain-source on-state resistance
VGS = −10 V; ID = −0.13 A;
see Fig.10
−−
10
y
fs
forward transfer admittance
VDS = −25 V; ID = −0.13 A
50
−−
mS
Ciss
input capacitance
VGS = 0; VDS = −25 V; f = 1 MHz;
see Fig.7
25
45
pF
Coss
output capacitance
15
25
pF
Crss
reverse transfer capacitance
3.5
12
pF
Switching times (see Figs 5 and 6)
ton
turn-on switching time
VGS =0to −10 V; VDD = −40 V;
ID = −0.2 A
3
ns
toff
turn-off switching time
VGS = −10 to 0 V; VDD = −40 V;
ID = −0.2 A
7
ns


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