NCP4330 datasheet(3/18 Pages) ONSEMI

Part #	NCP4330

Description	Post Regulation Driver

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP4330

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3

MAXIMUM RATINGS

Symbol

Rating

Value

Unit

BST

Bootstrap Input

−0.3, +40

V

RST

Reset Input

−0.3, +5.0

V

C_ramp

Timing Capacitor Node (Note 1)

−0.3, VrampHL

V

I_ramp

Regulation Current Input (Note 1)

−0.3, Vcl

V

VDD

Supply Voltage

−0.3, +20

V

RqJA

Thermal Resistance

180

°C/W

TJ

Operating Junction Temperature Range (Note 2)

−40, +125

°C

TJmax

Maximum Junction Temperature

150

°C

TSmax

Storage Temperature Range

−65 to +150

°C

TLmax

Lead Temperature (Soldering, 10 s)

300

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. VrampHL and Vcl are the internal clamp levels of pins 4 and 5 respectively.

2. The maximum junction temperature should not be exceeded.

ELECTRICAL CHARACTERISTICS (VDD = 10 V, VBST = 25 V, TJ from −25°C to +125°C, unless otherwise specified.)

Symbol

Characteristic

Min

Typ

Max

Unit

High−Side Output Stage

VHS_H

High−Side Output Voltage in High State @ Isource = −100 mA

22.5

23.5

−

V

VHS_L

High−Side Output Voltage in Low State @ Isink = 100 mA

−

0.9

1.5

V

Isource_HS

Current Capability of the High−Side Drive Output in High State

−

0.5

−

A

Isink_HS

Current Capability of the High−Side Drive Output in Low State

−

0.75

−

A

tr−HS

High−Side Output Voltage Rise Time from 0.5 V to 12 V (CL = 1.0 nF)

−

25

−

ns

tf−HS

High−Side Output Voltage Fall Time from 20 V to 0.5 V (CL = 1.0 nF)

−

25

−

ns

TLS−HS

Delay from Low−Side Gate Drive Low (High) to High−Side Drive High (Low)

−

100

−

ns

Low−Side Output Stage

VLS_H

Low−Side Output Voltage in High State @ Isource = −500 mA

7.4

8.2

−

V

VLS_L

Low−Side Output Voltage in Low State @ Isink = 750 mA

−

1.3

1.7

V

Isource_LS

Current Capability of the Low−Side Drive Output in High State

−

0.5

−

A

Isink_LS

Current Capability of the Low−Side Drive Output in Low State

−

0.75

−

A

tr−LS

Low−Side Output Voltage Rise Time from 0.5 V to 7.0 V (CL = 2.0 nF)

−

25

−

ns

tf−LS

Low−Side Output Voltage Fall Time from 9.5 V to 0.5 V (CL = 2.0 nF)

−

25

−

ns

Ramp Control

Icharge

C_ramp Current

@ Ipin5 = 100

mA

@ Ipin5 = 1.5 mA

90

1400

102

1590

110

1800

mA

Vcl

Pin5 Clamp Voltage @ Ipin5 = 1.5 mA

0.7

1.4

2.1

V

VrefL

Ramp Control Reference Voltage, Vpin4 Falling

1.3

1. 5

1.7

V

VrefH

Ramp Control Reference Voltage, Vpin4 Rising

2.25

2.5

2.75

V

VrampHL

Ramp Voltage Maximum Value @ Ipin5 = 1.5 mA

3.2

3.6

4.2

V

VrampLL

Ramp Voltage Low Voltage @ Ipin5 = 1.5 mA

−

100

mV

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