BF1206F datasheet(11/20 Pages) PHILIPS

Part #	BF1206F

Description	Dual N-channel dual gate MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BF1206F_1

Product data sheet

Rev. 01 — 30 January 2006

11 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

[1]

Calculated from measured S-parameters.

[2]

Measured in Figure 32 test circuit.

8.3.1 Graphs for ampliﬁer B

Xmod

cross modulation

input level for k=1%;fw = 50 MHz; funw =60MHz [2]

at 0 dB AGC

89

-

dB

µV

at 10 dB AGC

-

85

-

dB

µV

at 40 dB AGC

93

98

-

dB

µV

Table 11:

Dynamic characteristics for ampliﬁer B …continued

Common source; Tamb =25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.

Symbol Parameter

Conditions

Min

Typ

Max Unit

(1) VG2-S = 2.5 V.

(2) VG2-S = 2.0 V.

(3) VG2-S = 1.5 V.

(4) VG2-S = 1.0 V.

VDS(B) = 2.8 V; Tj =25 °C.

(1) VG1-S(B) = 1.3 V.

(2) VG1-S(B) = 1.2 V.

(3) VG1-S(B) = 1.1 V.

(4) VG1-S(B) = 1.0 V.

(5) VG1-S(B) = 0.9 V.

(6) VG1-S(B) = 0.85 V.

(7) VG1-S(B) = 0.8 V.

VG2-S = 2.5 V; Tj =25 °C.

Fig 17. Ampliﬁer B: transfer characteristics; typical

values

Fig 18. Ampliﬁer B: output characteristics; typical

values

VG1−S (V)

0

2.0

1.6

0.8

1.2

0.4

001aad911

5

10

15

ID

(mA)

0

(1)

(2)

(3)

(4)

VDS (V)

04

3

12

001aad912

8

4

12

16

ID

(mA)

0

(7)

(6)

(5)

(4)

(3)

(2)

(1)

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