NJT4030PT1G datasheet(1/6 Pages) ONSEMI

Part #	NJT4030PT1G

Description	Bipolar Power Transistors PNP Silicon

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December, 2006 − Rev. P2

1

Publication Order Number:

NJT4030P/D

NJT4030P

Preferred Device

Product Preview

Bipolar Power Transistors

PNP Silicon

Features

• Collector −Emitter Sustaining Voltage −

VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc

• High DC Current Gain −

hFE

= 200 (Min) @ IC = 1.0 Adc

= 100 (Min) @ IC = 3.0 Adc

• Low Collector −Emitter Saturation Voltage −

VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc

= 0.500 Vdc (Max) @ IC = 3.0 Adc

• SOT−223 Surface Mount Packaging

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B; > 8000 V

Machine Model, C; > 400 V

• These are Pb−Free Devices

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

SOT−223

CASE 318E

STYLE 1

MARKING

DIAGRAM

Schematic

C 2,4

B 1

E 3

Top View Pinout

C

CE

B

4

12

3

PNP TRANSISTOR

3.0 AMPERES

40 VOLTS, 2.0 WATTS

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

PIN ASSIGNMENT

http://onsemi.com

1

4030P

G

AYW

A

= Assembly Location

Y

Year

W

= Work Week

4030P

= Specific Device Code

G

= Pb−Free Package

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