SS12T3 datasheet(3/5 Pages) ONSEMI

Part #	SS12T3

Description	12 V, 6.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS12600CF8T1G

http://onsemi.com

3

150°C (5 V)

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

0.001

IC, COLLECTOR CURRENT (A)

0.20

0.05

0

0.01

0.1

1.0

10

0.10

0.15

0.25

IC/IB = 10

VCE(sat) = 150°C

25°C

−55°C

0.001

IC, COLLECTOR CURRENT (A)

0.20

0.05

0

0.01

0.1

1.0

10

0.10

0.15

0.40

IC/IB = 100

VCE(sat) = −55°C

25°C

150°C

0.25

150°C

25°C

−55°C

Figure 3. DC Current Gain vs.

Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A)

0.01

0.001

1.0

0.4

0.1

0.001

IC, COLLECTOR CURRENT (A)

0.6

0.4

0.2

0.1

IB, BASE CURRENT (mA)

1.0

0.6

0.4

0.2

0

0.01

0.1

10

1.0

0.1

0.6

0.8

0.3

150°C

25°C

−55°C

0.8

1.0

100

200

300

400

500

600

800

0.001

0.01

0.1

1.0

10

1.0

1.1

1.2

10

IC = 500 mA

10 mA

100 mA

300 mA

VCE = −1.0 V

0.30

700

0.7

0.5

0.3

0.9

0.35

150°C (2 V)

25°C (5 V)

25°C (2 V)

−55°C (5 V)

−55°C (2 V)

0.5

0.7

0.9

0.01

10

IC/IB = 10

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