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BFG325 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BFG325 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 9397 750 14247 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 4 of 12 Philips Semiconductors BFG325/XR NPN 14 GHz wideband transistor Fig 1. Power derating curve Fig 2. Collector current as a function of collector-emitter voltage; typical values IC = 0 mA; f = 1 MHz. IC = 15 mA; VCE =3V. Fig 3. Collector-base capacitance as a function of collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values Tsp (°C) 0 200 150 50 100 001aac147 100 150 50 200 250 Ptot (mW) 0 001aac148 VCE (V) 06 5 3 14 2 IC (mA) 10 15 20 25 5 30 35 0 IB = 350 µA 300 µA 250 µA 150 µA 100 µA 200 µA 50 µA VCB (V) 05 4 23 1 001aac149 0.26 0.30 0.34 CCBS (pF) 0.22 001aac150 20 10 30 40 G (dB) 0 f (MHz) 10 104 103 102 Gmax MSG s21 2 |
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Similar Description - BFG325 |
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