CM20MD3-12H datasheet(5/5 Pages) MITSUBISHI

Part #	CM20MD3-12H

Description	MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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5 / 5 page

Feb.1999

101

10–3

10–5

10–4

100

7

5

3

2

10–2

7

5

3

2

10–1

7

5

3

2

7

5

3

2

10–323 5 7

23 5 7

101

10–2

10–1

100

10–3

7

5

3

2

10–2

7

5

3

2

10–1

3

2

23 5 7

Single Pulse

Tf = 25°C

Rth(j – f) = 2.2°C/ W

101

10–3

10–5

10–4

100

7

5

3

2

10–2

7

5

3

2

10–1

7

5

3

2

7

5

3

2

10–323 5 7

23 5 7

101

10–2

10–1

100

10–3

7

5

3

2

10–2

7

5

3

2

10–1

3

2

23 5 7

Single Pulse

Tf = 25°C

Rth(j – f) = 3.1°C/ W

101

103

7

5

3

2

100

23

5 7

101

102

7

5

3

2

23

5 7

102

td(off)

VCC = 300V

VGE = ±15V

RG = 31

Ω

Tj = 125°C

td(on)

tf

tr

101

103

7

5

3

2

100

23

5 7

101

102

7

5

3

2

23

5 7

102

10–1

101

7

5

3

2

100

7

5

3

2

– di/dt = 40A / µs

Tj = 25°C

trr

Irr

20

16

12

8

4

0

100

0

20

40

60

80

18

14

10

6

2

VCC = 200V

VCC = 300V

IC = 20A

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

EMITTER CURRENT IE (A)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part)

TIME (s)

VGE – GATE CHARGE

(TYPICAL)

GATE CHARGE QG (nC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi part)

MITSUBISHI IGBT MODULES

CM20MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

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