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LMX2486 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LMX2486 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 37 page Electrical Characteristics (V CC = 3.0V; -40˚C ≤ T A ≤ +85˚C unless otherwise specified) (Continued) Symbol Parameter Conditions Value Units Min Typ Max RF SYNTHESIZER PARAMETERS I CPoutRFSINK RF Charge Pump Sink Current (Note 4) RF_CPG = 0 V CPoutRF =VCC/2 -95 µA RF_CPG = 1 V CPoutRF =VCC/2 -190 µA ... ... µA RF_CPG = 15 V CPoutRF =VCC/2 -1520 µA I CPoutRFTRI RF Charge Pump TRI-STATE Current Magnitude 0.5 ≤ V CPoutRF ≤ V CC -0.5 2 10 nA |I CPoutRF%MIS | Magnitude of RF CP Sink vs. CP Source Mismatch V CPoutRF =VCC/2 T A = 25˚C RF_CPG > 2 3 10 % RF_CPG ≤ 2 3 13 % |I CPoutRF%V | Magnitude of RF CP Current vs. CP Voltage 0.5 ≤ V CPoutRF ≤ V CC -0.5 T A = 25˚C 28 % |I CPoutRF%T | Magnitude of RF CP Current vs. Temperature V CPoutRF =VCC/2 4 % IF SYNTHESIZER PARAMETERS f FinIF Operating Frequency IF_P = 8 250 2000 MHz IF_P = 16 250 3000 p FinIF IF Input Sensitivity -10 +5 dBm f COMP Phase Detector Frequency 10 MHz I CPoutIFSRCE IF Charge Pump Source Current V CPoutIF =VCC/2 3.5 mA I CPoutIFSINK IF Charge Pump Sink Current V CPoutIF =VCC/2 -3.5 mA I CPoutIFTRI IF Charge Pump TRI-STATE Current Magnitude 0.5 ≤ V CPoutIF ≤ V CC RF -0.5 2 10 nA |I CPoutIF%MIS | Magnitude of IF CP Sink vs. CP Source Mismatch V CPoutIF =VCC/2 T A = 25˚C 18 % |I CPoutIF%V | Magnitude of IF CP Current vs. CP Voltage 0.5 ≤ V CPoutIF ≤ V CC -0.5 T A = 25˚C 410 % | I CPoutIF%TEMP| Magnitude of IF CP Current vs. Temperature V CPoutIF =VCC/2 4 % OSCILLATOR PARAMETERS f OSCin Oscillator Operating Frequency OSC2X = 0 5 110 MHz OSC2X = 1 5 20 MHz v OSCin Oscillator Input Sensitivity 0.5 V CC V P-P I OSCin Oscillator Input Current -100 100 µA SPURS Spurs in band (Note 5) -55 dBc www.national.com 4 |
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