BTA216B datasheet(2/6 Pages) PHILIPS

Part #	BTA216B

Description	Triacs high commutation

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Three quadrant triacs

BTA216 series B

high commutation

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance

full cycle

-

1.2

K/W

junction to mounting base

half cycle

-

1.7

K/W

R

th j-a

Thermal resistance

in free air

-

60

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

GT

Gate trigger current

2

V

D = 12 V; IT = 0.1 A

T2+ G+

2

18

50

mA

T2+ G-

2

21

50

mA

T2- G-

2

34

50

mA

I

L

Latching current

V

D = 12 V; IGT = 0.1 A

T2+ G+

-

31

60

mA

T2+ G-

-

34

90

mA

T2- G-

-

30

60

mA

I

H

Holding current

V

D = 12 V; IGT = 0.1 A

-

31

60

mA

V

T

On-state voltage

I

T = 20 A

-

1.2

1.5

V

GT

Gate trigger voltage

V

D = 12 V; IT = 0.1 A

-

0.7

1.5

V

D = 400 V; IT = 0.1 A; Tj = 125 ˚C

0.25

0.4

-

V

I

D

Off-state leakage current

V

D = VDRM(max); Tj = 125 ˚C

-

0.1

0.5

mA

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dV

D/dt

Critical rate of rise of

V

DM = 67% VDRM(max); Tj = 125 ˚C;

1000

4000

-

V/

µs

off-state voltage

exponential waveform; gate open circuit

dI

com/dt

Critical rate of change of

V

DM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A;

-

28

-

A/ms

commutating current

without snubber; gate open circuit

t

gt

Gate controlled turn-on

I

TM = 20 A; VD = VDRM(max); IG = 0.1 A;

-

2

-

µs

time

dI

G/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

October 1997

2

Rev 1.200

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