Electronic Components Datasheet Search |
|
K6E1004C1B-L20 Datasheet(PDF) 8 Page - Samsung semiconductor |
|
K6E1004C1B-L20 Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 9 page K6E1004C1B-C/B-L CMOS SRAM PRELIMINARY Rev. 3.0 - 8 - July 1998 FUNCTIONAL DESCRIPTION * X means Don ′t Care. CS WE OE Mode I/O Pin Supply Current H X X* Not Select High-Z ISB, ISB1 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC DATA RETENTION CHARACTERISTICS*(TA=0 to 70 °C) * Data Retention Characteristic is for L-ver only. Parameter Symbol Test Condition Min. Typ. Max. Unit VCC for Data Retention VDR CS ≥VCC-0.2V 2.0 - 5.5 V Data Retention Current IDR VCC=3.0V, CS ≥VCC-0.2V VIN ≥VCC-0.2V or VIN≤0.2V - - 0.4 mA Data Retention Set-Up Time tSDR See Data Retention Wave form(below) 0 - - ns Recovery Time tRDR 5 - - ms DATA RETENTION WAVE FORM VCC 4.5V VIH VDR CS GND Data Retention Mode CS ≥VCC - 0.2V tSDR tRDR CS controlled |
Similar Part No. - K6E1004C1B-L20 |
|
Similar Description - K6E1004C1B-L20 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |