Electronic Components Datasheet Search |
|
TC55NEM208AFPV Datasheet(PDF) 8 Page - Toshiba Semiconductor |
|
TC55NEM208AFPV Datasheet(HTML) 8 Page - Toshiba Semiconductor |
8 / 11 page TC55NEM208AFPV/AFTV55,70 2002-10-31 8/11 DATA RETENTION CHARACTERISTICS (Ta = −40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDH Data Retention Supply Voltage 2.0 5.5 V Ta = −40~40°C 3 IDDS2 Standby Current Ta = −40~85°C 20 µA tCDR Chip Deselect to Data Retention Mode Time 0 ns tR Recovery Time 5 ms CONTROLLED DATA RETENTION MODE Note: When CE is operating at the VIH level (2.2V), the standby current is given by IDDS1 during the transition of VDD from 4.5 to 2.4V. CE VDD 4.5 V GND VIH DATA RETENTION MODE tR (See Note) (See Note) tCDR VDD − 0.2 V CE |
Similar Part No. - TC55NEM208AFPV |
|
Similar Description - TC55NEM208AFPV |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |