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BTA225 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BTA225
Description  Three quadrant triacs high commutation
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA225 Datasheet(HTML) 3 Page - NXP Semiconductors

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September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA225 series B
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
1.0
K/W
junction to mounting base
half cycle
-
-
1.4
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
2
18
50
mA
T2+ G-
2
21
50
mA
T2- G-
2
34
50
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
31
60
mA
T2+ G-
-
34
90
mA
T2- G-
-
30
60
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
31
60
mA
V
T
On-state voltage
I
T = 30 A
-
1.3
1.55
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A; Tj = 125 ˚C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 ˚C;
1000
4000
-
V/
µs
off-state voltage
exponential waveform; gate open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 ˚C; IT(RMS) = 25 A;
-
44
-
A/ms
commutating current
without snubber; gate open circuit
t
gt
Gate controlled turn-on
I
TM = 30 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
µs
time
dI
G/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.


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