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BTA225 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BTA225 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 4 page September 1997 3 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA225 series B THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 1.0 K/W junction to mounting base half cycle - - 1.4 K/W R th j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current 2 V D = 12 V; IT = 0.1 A T2+ G+ 2 18 50 mA T2+ G- 2 21 50 mA T2- G- 2 34 50 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 31 60 mA T2+ G- - 34 90 mA T2- G- - 30 60 mA I H Holding current V D = 12 V; IGT = 0.1 A - 31 60 mA V T On-state voltage I T = 30 A - 1.3 1.55 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V I D Off-state leakage current V D = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; 1000 4000 - V/ µs off-state voltage exponential waveform; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 125 ˚C; IT(RMS) = 25 A; - 44 - A/ms commutating current without snubber; gate open circuit t gt Gate controlled turn-on I TM = 30 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dI G/dt = 5 A/µs 2 Device does not trigger in the T2-, G+ quadrant. |
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