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BTA225B-600C Datasheet(PDF) 1 Page - NXP Semiconductors |
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BTA225B-600C Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 4 page Philips Semiconductors Product specification Three quadrant triacs BTA225B series B high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting, intended for use in BTA225B- 500B 600B 800B circuits where high static and dynamic V DRM Repetitive peak off-state 500 600 800 V dV/dt and high dI/dt can occur. These voltages devices will commutate the full rated I T(RMS) RMS on-state current 25 25 25 A rms current at the maximum rated I TSM Non-repetitive peak on-state 180 180 180 A junction temperature, without the aid current of a snubber. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate mb main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; - 25 A T mb ≤ 91 ˚C I TSM Non-repetitive peak full sine wave; on-state current T j = 25 ˚C prior to surge t = 20 ms - t = 16.7 ms - 190 A 209 A I 2tI2t for fusing t = 10 ms - 180 A 2s dI T/dt Repetitive rate of rise of I TM = 30 A; IG = 0.2 A; 100 A/ µs on-state current after dI G/dt = 0.2 A/µs triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms period - 0.5 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature 13 mb 2 T1 T2 G 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. September 1997 1 Rev 1.100 |
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