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BU2725AF Datasheet(PDF) 5 Page - NXP Semiconductors |
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BU2725AF Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF Fig.13. Test Circuit RBSOA. V CC = 150 V; -VBB = 1 - 4 V; L C = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH; C FB = 1 - 3 nF; IB(end) = 0.8 - 4 A Fig.14. Reverse bias safe operating area. T j ≤ Tjmax LB IBend -VBB LC T.U.T. VCC VCL CFB 100 1000 1700 0 5 10 15 20 25 30 35 VCE / V IC / A BU2727A/AF/D/DF Area where fails occur September 1997 5 Rev 1.300 |
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