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H7N0608LD Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # H7N0608LD
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N0608LD Datasheet(HTML) 5 Page - Renesas Technology Corp

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H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 5 of 11
0
48
12
16
20
500
400
300
200
100
ID = 50 A
20 A
10 A
1
30
100
3
100
1
10
1000
10
3
30
300
VGS = 4.5 V
10 V
0.1
0.3
1
3
10
100
1000
300
30
10
1
3
0.3
0.1
Tc = –40
°C
150
°C
25
°C
VDS = 10 V
Pulse Test
20
16
12
8
4
–50
0
–25
25
50
75 100 125 150
0
VGS = 10 V
4.5 V
50 A
10, 20 A
10, 20, 50 A
30
100
Pulse Test
Pulse Test
Pulse Test
Drain Current ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(
°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID
(A)
Forward Transfer Admittance vs.
Drain Current
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage


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