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H7N0608LD Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # H7N0608LD
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N0608LD Datasheet(HTML) 2 Page - Renesas Technology Corp

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H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 2 of 11
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
70
A
Drain peak current
ID (pulse)
Note1
280
A
Body-drain diode reverse drain current
IDR
70
A
Avalanche current
IAP
Note3
40
A
Avalanche energy
EAR
Note3
137
mJ
Channel dissipation
Pch
Note2
80
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω


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