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BU4523AF Datasheet(PDF) 2 Page - NXP Semiconductors |
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BU4523AF Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AF ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 6 V; IC = 0 A - - 100 µA BV EBO Emitter-base breakdown voltage I B = 1 mA 7.5 12.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 800 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 8 A; IB = 2 A - - 3.0 V V BEsat Base-emitter saturation voltage I C = 8 A; IB = 2 A 0.85 0.95 1.1 V h FE DC current gain I C = 1 A; VCE = 5 V - 14 - h FE I C = 8 A; VCE = 5 V 4.2 5.8 7.3 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (16 kHz line I Csat = 8.0 A;IB1 = 1.6 A deflection circuit) (I B2 = -4 A) t s Turn-off storage time 4.5 5.5 µs t f Turn-off fall time 0.3 0.4 µs Switching times (70 kHz line I Csat = 6.5 A;IB1 = 1.3 A deflection circuit) (I B2 = -3.9 A) t s Turn-off storage time 2.3 - µs t f Turn-off fall time 0.14 - µs 2 Measured with half sine-wave voltage (curve tracer). May 1998 2 Rev 1.100 |
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