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NAND02GW4B2CN1F Datasheet(PDF) 8 Page - STMicroelectronics

Part # NAND02GW4B2CN1F
Description  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND02GW4B2CN1F Datasheet(HTML) 8 Page - STMicroelectronics

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Description
NAND01G-B2B, NAND02G-B2C
8/62
For information on how to order these options refer to Table 29: Ordering Information
Scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 2: Product Description, for all the devices available in the family.
Table 2.
Product Description
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operatin
g Voltage
Timings
Package
Random
access
time
(max)
Sequential
access
time
(min)
Page
Program
time
(typ)
Block
Erase
(typ)
NAND01G
-B2B
NAND01GR3B2B
1Gbit
x8
2048+
64
Bytes
128K+
4K
Bytes
64
Pages x
1024
Blocks
1.7 to
1.95V
25µs
50ns
200µs
2ms
VFBGA63
9x11mm
NAND01GW3B2B
2.7 to
3.6V
25µs
30ns
TSOP48
NAND01GR4B2B
x16
1024+
32
Words
64K+
2K
Words
1.7 to
1.95V
25µs
50ns
(1)
NAND01GW4B2B
2.7 to
3.6V
25µs
30ns
(1)
NAND02G
-B2C
NAND02GR3B2C
2Gbit
x8
2048+
64
Bytes
128K+
4K
Bytes
64
Pages x
2048
Blocks
1.7 to
1.95V
25µs
50ns
2ms
VFBGA63
9.5x12mm
NAND02GW3B2C
2.7 to
3.6V
25µs
30ns
TSOP48
NAND02GR4B2C
x16
1024+
32
Words
64K+
2K
Words
1.7 to
1.95V
25µs
50ns
(1)
NAND02GW4B2C
2.7 to
3.6V
25µs
30ns
(1)
1.
x16 organization only available for MCP


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