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2

*1 Refer to MOSFET A.S.O curve

*2 Refer to MOSFET Tch-EAS curve

*3 Refer to MOSFET Ta-PD1 curve

*4 Refer to TF-PD2 curve for Control IC

*5 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)

Absolute Maximum Ratings (Ta=25℃

℃

℃

℃

)

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are

absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions.

IRIS-A6159

Symbol

Definition

Terminals Max. Ratings

Units

Note

Drain Current

*1

8-3

1.8

A

Single Pulse

Ta=-20~+125℃

Single Pulse

O.C.P. pin Voltage

1-3

-0.5~6

V

Input voltage for control part

2-3

35

V

F.B/O.L.P pin voltage

4-3

-0.5~10

V

Startup pin voltage

5-3

-0.3~600

V

Power dissipation for MOSFET *3

8-3

1.35

W

*5

Power dissipation for control part

(Control IC) *4

Internal frame temperature

Refer to recommended

in operation

operating temperature

Top

Operating ambient temperature

-

-20 ~ +125

℃

Tstg

Storage temperature

-

-40 ~ +125

℃

Tch

Channel temperature

-

150

℃

A

Single pulse avalanche energy *2

8-3

24

mJ

Maximum switching current

8-3

1.8

Specified by

-

-20 ~ +125

℃

2-3

0.15

W