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SI4532DY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4532DY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Si4532DY Vishay Siliconix Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors 3-3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NCHANNEL 0 4 8 12 16 20 024 68 0 2 4 6 8 10 02468 10 0.4 0.8 1.2 1.6 2.0 –50 –25 0 25 50 75 100 125 150 0 0.04 0.08 0.12 0.16 0.20 0 4 8 12 16 20 0 150 300 450 600 750 0 5 10 15 20 25 30 0 4 8 12 16 20 0123456 Output Characteristics Transfer Characteristics Gate Charge OnResistance vs. Drain Current VDS – Drain-to-Source Voltage (V) VGS = 10 thru 6 V 5 V VGS – Gate-to-Source Voltage (V) TC = –55_C Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 3.9 A ID – Drain Current (A) Capacitance OnResistance vs. Junction Temperature VGS = 10 V ID = 3.9 A TJ – Junction Temperature (_C) VGS = 10 V VGS = 4.5 V 4 V 3 V 125 _C 25 _C |
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