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FDW2502P Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDW2502P
Description  Dual P-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2502P Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDW2502P Rev. F (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
–14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±12 V,
VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
–0.4
–0.9
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
3.2
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –4.4 A
VGS = –4.5 V, ID = –4.4 ,TJ=125°C
VGS = –2.5 V,
ID = –3.3 A
27
35
38
35
56
57
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–30
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –4.4 A
18
S
Dynamic Characteristics
Ciss
Input Capacitance
1465
pF
Coss
Output Capacitance
310
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
155
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
7.7
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
14
25
ns
tr
Turn–On Rise Time
8
16
ns
td(off)
Turn–Off Delay Time
51
82
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
29
47
ns
Qg
Total Gate Charge
VDS = –5 V,
ID = –4.4 A,
VGS = –5 V
15
21
nC
Qgs
Gate–Source Charge
2.9
nC
Qgd
Gate–Drain Charge
3.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
trr
Diode Reverse Recovery Time
21
ns
Qrr
Diode Reverse Recovery Charge
IF = –4.4 A,
diF/dt = 100 A/µs
8.1
nC
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.83
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.83 A (Note 2)
–0.7
–1.2
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a) R
θJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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