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STD90NH02L Datasheet(PDF) 4 Page - STMicroelectronics |
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STD90NH02L Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 16 page  Electrical characteristics STD90NH02L- STD90NH02L-1 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 25mA, VGS =0 24 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 20V VDS = 20V, TC = 125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 1 1.8 2.5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A VGS = 5V, ID = 15A 0.0052 0.007 0.006 0.011 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Forward transconductance VDS = 10V, ID = 30A 40 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15V, f = 1MHz, VGS = 0 2850 800 120 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 10V, ID = 30A RG =4.7Ω VGS = 10V (see Figure 13) 13 75 50 18 24.3 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 10V, ID = 60A, VGS = 10V, RG =4.7Ω (see Figure 14) 47.5 10 7 64 nC nC nC Qoss (2) 2. Qoss.= Coss * ∆ Vin, Coss = Cgd + Cgd. See Chapter 4: Appendix A Output charge VDS =16V, VGS =0V 18.8 nC Qgls (3) 3. Gate charge for synchronous operation Third-quadrant gate charge VDS < 0V, VGS = 10V 44 nC RG Gate input resistance f=1MHz Gate DC Bias =0 Test Signal Level =20mV Open Drain 1 Ω |
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