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K9F1208U0C-P Datasheet(PDF) 3 Page - Samsung semiconductor |
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K9F1208U0C-P Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 38 page FLASH MEMORY 3 K9F1208R0C K9F1208U0C K9F1208B0C GENERAL DESCRIPTION FEATURES • Voltage Supply - 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V - 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V • Organization - Memory Cell Array : (64M + 2M) x 8bits - Data Register : (512 + 16) x 8bits • Automatic Program and Erase - Page Program : (512 + 16) x 8bits - Block Erase : (16K + 512)Bytes • Page Read Operation - Page Size : (512 + 16)Bytes - Random Access : 15 µs(Max.) - Serial Page Access : 42ns(Min.) • Fast Write Cycle Time - Program time : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions 64M x 8 Bits NAND Flash Memory • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles (with 1bit/512Byte ECC) - Data Retention : 10 Years • Command Register Operation • Unique ID for Copyright Protection • Package - K9F1208U0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1208X0C-JCB0/JIB0: Pb-Free Package 63-Ball FBGA(8.5 x 13 x 1.2mmt) - K9F1208B0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200 µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verifica- tion and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0C ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9F1208R0C-J 1.65V ~ 1.95V x8 FBGA K9F1208B0C-P 2.5V ~ 2.9V TSOP1 K9F1208U0C-P 2.7V ~ 3.6V TSOP1 K9F1208U0C-J FBGA |
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