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K9F1208U0C-P Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K9F1208U0C-P
Description  FLASH MEMORY
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1208U0C-P Datasheet(HTML) 3 Page - Samsung semiconductor

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FLASH MEMORY
3
K9F1208R0C
K9F1208U0C
K9F1208B0C
GENERAL DESCRIPTION
FEATURES
• Voltage Supply
- 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V
- 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (64M + 2M) x 8bits
- Data Register : (512 + 16) x 8bits
• Automatic Program and Erase
- Page Program : (512 + 16) x 8bits
- Block Erase : (16K + 512)Bytes
• Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access
: 15
µs(Max.)
- Serial Page Access : 42ns(Min.)
• Fast Write Cycle Time
- Program time : 200
µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
64M x 8 Bits NAND Flash Memory
• Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
(with 1bit/512Byte ECC)
- Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package
- K9F1208U0C-PCB0/PIB0 : Pb-Free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0C-JCB0/JIB0: Pb-Free Package
63-Ball FBGA(8.5 x 13 x 1.2mmt)
- K9F1208B0C-PCB0/PIB0 : Pb-Free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in
typical 200
µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can
be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verifica-
tion and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0C
′s extended reliability of 100K
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F1208R0C-J
1.65V ~ 1.95V
x8
FBGA
K9F1208B0C-P
2.5V ~ 2.9V
TSOP1
K9F1208U0C-P
2.7V ~ 3.6V
TSOP1
K9F1208U0C-J
FBGA


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