FLASH MEMORY

2

K9F1208R0C

K9F1208U0C

K9F1208B0C

Document Title

64M x 8 Bits NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.0

0.1

0.2

0.3

0.4

0.5

1.0

Remark

Advance

Advance

Advance

Advance

Advance

Preliminary

Final

History

Initial issue.

2.7V part is added

1. Add tRPS/tRCS/tREAS parameter for status read

2. Add nWP timing guide

1. Change from tRPS/tRCS/tREAS to tRPB/tRCB/tREAB parameter for

1.8V device busy state

1. Sequential Row Read is added

1. tCRY is changed (50ns+tR(R/B) --> 5us)

Draft Date

Nov. 10th 2005

July 13th 2006

Aug. 1st 2006

Oct. 12th 2006

Nov. 14th 2006

Nov. 15th 2006

Dec. 28th 2006

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.samsung.com/Products/Semiconductor/