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K8D1716UBB-YC07 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K8D1716UBB-YC07
Description  16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K8D1716UBB-YC07 Datasheet(HTML) 9 Page - Samsung semiconductor

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FLASH MEMORY
K8D1716UTB / K8D1716UBB
Revision 0.0
July 2004
9
Notes :
1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data
DA : Dual Bank Address, BA : Block Address (A12 - A19), X = Don’t care .
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
3. The 4th cycle data of Autoselect mode is output data.
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
5. The Erase Suspend command is applicable only to the Block Erase operation.
6. Command is valid when the device is in read mode or Autoselect mode.
7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded.
8. A11 - A19 are also don’t care, except for the case of special notice.
Description
CE
OE
WE
A19
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8 to DQ15
DQ7
to
DQ0
BYTE
=VIH
BYTE
=VIL
Manufacturer ID
L
L
H
DA
X
VID
XL
X
L
L
X
X
ECH
Device Code K8D1716UT
(Top Boot Block)
LL
H
DA
X
VID
X
L
X
L
H
22H
X
A0H
Device Code K8D1716UB
(Bottom Boot Block)
LL
H
DA
X
VID
X
L
X
L
H
22H
X
A2H
Block Protection
Verification
LL
H
BA
X
VID
XL
X
H
L
X
X
01H (Protected),
00H (Unprotected)
Secode Block (2)
Indicator Bit (DQ7)
LL
H
DA
X
VID
XL
X
H
H
X
X
80H (Factory locked),
00H (Not factory locked)
Table 9. K8D1716U Autoselect Codes, (High Voltage Method)
Notes :
1. L=Logic Low=VIL, H=Logic High=VIH, DA=Dual Bank Address, BA=Block Address, X=Don’t care.
2. Secode Block : Security Code Block.


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