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BD179 Datasheet(PDF) 2 Page - STMicroelectronics |
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BD179 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 4.16 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 80 V 100 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 100 mA 80 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IB = 0.1 A 0.8 V VBE ∗ Base-Emitter Voltage IC = 1 A VCE = 2 V 1.3 V hFE ∗ DC Current Gain IC = 150 mA VCE = 2 V IC = 1 A VCE = 2 V 40 15 hFE hFE Groups IC = 150 mA VCE = 2 V group 16 100 250 fT Transition Frequency IC = 250 mA VCE = 10 V 3 MHz * Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves BD179 2/5 |
Similar Part No. - BD179_00 |
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Similar Description - BD179_00 |
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