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BUL804 Datasheet(PDF) 4 Page - STMicroelectronics

Part # BUL804
Description  High voltage fast-switching NPN Power Transistor
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL804 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
BUL804
4/10
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =-1.5V)
VCE =800V
VCE =800V
Tj =125°C
100
500
µA
µA
ICEO
Collector cut-off current
(IB =0)
VCE =450V
250
µA
VEBO
Emitter-base voltage
(IC = 0)
IE =10mA
8V
VCEO(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
IC =100mA
L =25mH
450
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC =1A
IB =0.2A
IC =2.5A
IB =0.5A
0.8
1.2
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC =1A
IB =0.2A
IC =2.5A
IB =0.5A
1.2
1.3
V
V
hFE
DC current gain
IC =10mA
VCE =5V
IC =2A
VCE =5V
10
10
20
ts
tf
Resistive load
Storage time
Fall time
VCC =300V
IC =2A
IB1 = -IB2 =0.4A
tp = 30µs (see fig.8 )
1.8
0.1
2.6
0.25
µs
µs
ts
tf
Inductive load
Storage time
Fall time
IC =2A
IB1 =0.4A
VBE(off) =-5V
RBB =0Ω
Vclamp=360V (see fig.9)
0.6
0.1
1
0.2
µs
µs


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