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BULB49DT4 Datasheet(PDF) 3 Page - STMicroelectronics |
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BULB49DT4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 11 page  BULB49DT4 Electrical ratings 3/11 1 Electrical ratings Table 2. Thermal data Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE =0) 850 V VCEO Collector-emitter voltage (IB =0) 450 V VEBO Emitter-base voltage (IC =0, IB <2A, tP < 10ms) V(BR)EBO V IC Collector current 5 A ICM Collector peak current (tP < 5ms) 10 A IB Base current 2 A IBM Base peak current (tP < 5ms) 4 A Ptot Total dissipation at Tc ≤ 25°C 80 W Tstg Storage temperature -65 to 150 °C TJ Max. operating junction temperature 150 °C Symbol Parameter Value Unit Rthj-case Rthj-amb Thermal resistance junction-case __max Thermal resistance junction-ambient __max 1.56 62.5 °C/W °C/W |
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