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BUV26 Datasheet(PDF) 2 Page - STMicroelectronics |
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BUV26 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.76 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off Current (RBE = 5 0Ω) VCE = 180V Tc = 125 oC3 mA ICEX Collector Cut-off Current (VBE = -1.5V) VCE = 180V Tc = 125 oC1 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A L = 25mH 90 V VEBO Emitter-Base Voltage (IC = 0) IE = 50mA 7 30 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 6A IB = 0.6A IC = 12A IB = 1.2A 0.6 1.5 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC =12A IB = 1.2A 2 V ton ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time VCC = 50V IC =12A VBE = - 6V IB1 = 1.2A RBB = 2.5 Ω 0.4 0.45 0.12 0.6 1 0.25 ms µs µs ts tf ts tf INDUCTIVE LOAD Storage time Fall Time Storage Time Fall Time VCC = 50V IC = 12A VBE = - 5V IB1 = 1.2A LB = - 0.5 µH VCC = 50V IC = 12 A VBE = - 5V IB1 = 1.2A LB = - 0.5 µH Tc = 125 o C 0.5 0.04 2 0.15 µs µs µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % BUV26 2/4 |
Similar Part No. - BUV26_03 |
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Similar Description - BUV26_03 |
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