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ST13005N Datasheet(PDF) 1 Page - STMicroelectronics |
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ST13005N Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 7 page ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s MEDIUM VOLTAGE CAPABILITY s NPN TRANSISTOR s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: s COMPACT FLUORESCENT LAMP (CFL) s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. ® INTERNAL SCHEMATIC DIAGRAM June 2001 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 4 A ICM Collector Peak Current (tp < 5 ms) 8 A IB Base Current 2 A IBM Base Peak Current (tp < 5 ms) 4 A Ptot Total Dissipation at Tc = 25 oC60 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC TO-220 1 2 3 1/7 |
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