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IRFSL4321PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFSL4321PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFS_SL4321PbF 2 www.irf.com S D G Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.096mH RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12 15 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 0.8 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 130 ––– ––– S Qg Total Gate Charge ––– 71 110 nC Qgs Gate-to-Source Charge ––– 24 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 21 ––– td(on) Turn-On Delay Time ––– 18 ––– ns tr Rise Time ––– 60 ––– td(off) Turn-Off Delay Time ––– 25 ––– tf Fall Time ––– 35 ––– Ciss Input Capacitance ––– 4460 ––– pF Coss Output Capacitance ––– 390 ––– Crss Reverse Transfer Capacitance ––– 82 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 83 c A (Body Diode) ISM Pulsed Source Current ––– ––– 330 A (Body Diode) d VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 89 130 ns ID = 50A Qrr Reverse Recovery Charge ––– 300 450 nC VR = 128V, IRRM Reverse Recovery Current ––– 6.5 ––– A di/dt = 100A/µs f ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 10V f VDD = 75V TJ = 25°C, IS = 50A, VGS = 0V f integral reverse p-n junction diode. showing the ID = 50A RG = 2.5Ω Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA d VGS = 10V, ID = 33A f VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125°C MOSFET symbol VDS = 75V Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz Conditions VDS = 25V, ID = 50A ID = 50A VGS = 20V VGS = -20V |
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