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STGB3NB60KD Datasheet(PDF) 3 Page - STMicroelectronics |
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STGB3NB60KD Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD SWITCHING PARAMETERS COLLECTOR-EMITTER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (**)Losses include Also the Tail (Jedec Standardization) (#) Calculated according to the iterative formula: Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VCE =25V,Ic= 3A 2.4 S Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE =25V,f= 1MHz,VGE = 0 220 50 5.8 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC =3A, VGE = 15V 14 3.3 7.5 18 nC nC nC tscw Short Circuit Withstand Time Vce =0.5 VBR(CES),VGE=15V, Tj = 125°C, RG =10 Ω 10 µs td(on) tr Turn-on Delay Time Rise Time VCC = 480 V, IC =3 A RG =10Ω,VGE =15 V 14 5 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC =3 ARG=10Ω VGE =15 V,Tj=125°C 520 30 A/µs µJ tc tr(Voff) td(off) tf Eoff(**) Ets Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc =480 V, IC =3 A, RGE =10 Ω ,VGE =15 V Tj = 25 °C 90 20 33 100 58 85 ns ns ns ns µJ µJ tc tr(Voff) td(off) tf Eoff(**) Ets Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc =480 V, IC =3 A, RGE =10 Ω ,VGE =15 V Tj = 125 °C 190 54 90 130 111 195 ns ns ns ns µJ µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit If Ifm Forward Current Forward Current Pulsed 3 24 A A Vf Forward On-Voltage If =1.5 A If =1.5 A, Tj =125 °C 1.2 0.95 1.8 V V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If =3A ,VR =35 V, Tj =125°C, di/dt = 100A/ µs 45 70 2.7 ns nC A I C TC () T JMAX T C – R THJ C – V CES AT MAX () TC IC , () × -------------------------------------------------------------------------------------- = |
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