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STGB14NC60K Datasheet(PDF) 4 Page - STMicroelectronics |
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STGB14NC60K Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STGB14NC60K - STGD14NC60K 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test condictions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA ICES Collector cut-off current (VGE = 0) VCE= Max rating, TC= 25°C VCE= Max rating, TC= 125°C 150 1 µA mA VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA 4.5 6.5 V VCE(SAT) Collector-emitter saturation voltage VGE= 15V, IC= 7A VGE= 15V, IC= 7A, Tc= 125°C 2.0 1.8 2.5 V V gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 15V , IC = 7A 3 S Table 4. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1 MHz, VGE= 0 760 86 15.5 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 7A, VGE = 15V (see Figure 17) 34.4 8.1 16.4 nC nC nC |
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