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STGP14NC60KD Datasheet(PDF) 4 Page - STMicroelectronics

Part # STGP14NC60KD
Description  N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP14NC60KD Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB14NC60KD - STGF14NC60KD - STGP14NC60KD
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
VBR(CES)
Collector-emitter breakdown
voltage
IC= 1mA, VGE= 0
600
V
IGES
Collector-emitter saturation
voltage
VCE= Max rating, TC= 25°C
VCE= Max rating, TC= 125°C
150
1
µA
mA
ICES
Gate threshold voltage
VGE= ±20V , VCE= 0
±100
nA
VGE(th)
Collector-emitter leakage
current (VCE = 0)
VCE= VGE, IC= 250µA
4.5
6.5
V
VCE(SAT)
Gate-emitter leakage
current (VCE = 0)
VGE= 15V, IC= 7A
VGE= 15V, IC= 7A, Tc= 125°C
2.0
1.8
2.5
V
V
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VCE = 15V , IC = 7A
3
S
Table 4.
Dynamic
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25V, f = 1 MHz, VGE= 0
760
86
15.5
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 390V, IC = 7A,
VGE = 15V
(see Figure 18)
34.4
8.1
16.4
nC
nC
nC


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