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GP10NB60SD Datasheet(PDF) 4 Page - STMicroelectronics |
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GP10NB60SD Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 12 page 2 Electrical characteristics STGP10NB60SD 4/12 Table 5. Switching On/Off (inductive load) Table 6. Switching energy (inductive load) Table 7. Collector-emitter diode (1)Pulse width limited by max. junction temperature (2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (3)Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (4) Turn-off losses include also the tail of the collector current (5) Calculated according to the iterative formula: Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 480V, IC = 10A RG= 1kΩ, VGE= 15V, Tj= 25°C (see Figure 18) 0.7 0.46 8 ns ns A/µs tc tr(Voff) tf Cross-over Time Off Voltage Rise Time Current Fall Time VCC = 480V, IC = 10A RG= 1kΩ, VGE= 15V,Tj= 25°C (see Figure 18) 2.2 1.2 1.2 µs µs µs tc tr(Voff) tf Cross-over Time Off Voltage Rise Time Current Fall Time VCC = 480V, IC = 10A RG= 1kΩ, VGE= 15V, Tj=125°C (see Figure 18) 3.8 1.2 1.9 µs µs µs Symbol Parameter Test Conditions Min. Typ. Max. Unit Eon Note 3 Eoff Note 4 Ets Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses VCC = 480V, IC = 10A RG=1kΩ, VGE= 15V, Tj= 25°C (see Figure 18) 0.6 5.0 5.6 mJ mJ mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit IF IFM Forward Current Forward Current pulsed 7 56 A A Vf Forward On-Voltage If = 3.5A If = 3.5A, Tj = 125°C 1.4 1.15 1.9 V V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 7A ,VR = 35V, Tj =125°C, di/dt = 100A/ µs (see Figure 19) 50 70 2.7 ns nC A I C T C () T JMAX T C – R THJ C – V CE SAT MAX () TC IC , () × -------------------------------------------------------------------------------------------------- = |
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