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STS8DNF3LL Datasheet(PDF) 5 Page - STMicroelectronics |
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STS8DNF3LL Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STS8DNF3LL Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 8 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 32 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8A, VGS = 0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8A, VDD = 15V di/dt = 100A/µs, Tj = 150°C (see Figure 15) 23 17 1.5 ns nC A |
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