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P75NS04Z Datasheet(PDF) 4 Page - STMicroelectronics |
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P75NS04Z Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STP75NS04Z 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 33 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 16V 1µA IGSS Gate body leakage current (VDS = 0) VGS = ±10V 2 µA VGSS Gate threshold breakdown voltage IGS= ±100µA 18 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 23 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A 711 m Ω Table 5. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 15A 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS =0 1860 628 196 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 20V, ID= 80 A, VGS= 10 V (see Figure 13) 50 14 16 nC nC nC |
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