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J309 Datasheet(PDF) 2 Page - ON Semiconductor

Part # J309
Description  JFET VHF/UHF Amplifiers N-Channel - Depletion
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

J309 Datasheet(HTML) 2 Page - ON Semiconductor

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J309, J310
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
V(BR)GSS
−25
Vdc
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
IGSS
−1.0
−1.0
nAdc
mAdc
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J309
J310
VGS(off)
−1.0
−2.0
−4.0
−6.5
Vdc
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J309
J310
IDSS
12
24
30
60
mAdc
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
VGS(f)
1.0
Vdc
SMALL− SIGNAL CHARACTERISTICS
Common−Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J309
J310
Re(yis)
0.7
0.5
mmhos
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yos)
0.25
mmhos
Common−Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Gpg
16
dB
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yfs)
12
mmhos
Common−Gate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yig)
12
mmhos
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
gfs
10000
8000
20000
18000
mmhos
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
gos
250
mmhos
Common−Gate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
gfg
13000
12000
mmhos
Common−Gate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
gog
100
150
mmhos
Gate−Drain Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
Cgd
1.8
2.5
pF
Gate−Source Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
Cgs
4.3
5.0
pF
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
10
nV
Hz
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 3.0%.


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