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ISPLSI1016E Datasheet(PDF) 3 Page - Lattice Semiconductor

Part No. ISPLSI1016E
Description  In-System Programmable High Density PLD
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Maker  LATTICE [Lattice Semiconductor]
Homepage  http://www.latticesemi.com
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 3 page
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3
Specifications ispLSI 1016E
Absolute Maximum Ratings 1
Supply Voltage VCC ................................ -0.5 to +7.0V
Input Voltage Applied ........................ -2.5 to VCC +1.0V
Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
TA = 0°C to + 70°C
TA = -40°C to + 85°C
SYMBOL
Table 2-0005/1016E
VCC
VIH
VIL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
4.75
4.5
2.0
0
5.25
5.5
Vcc+1
0.8
V
V
V
V
Commercial
Industrial
Capacitance (T
A=25
oC, f=1.0 MHz)
Data Retention Specifications
C
SYMBOL
Table 2-0006/1016E
C
PARAMETER
Y0 Clock Capacitance
12
UNITS
TYPICAL
TEST CONDITIONS
1
2
8
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
pf
pf
V = 5.0V, V
= 2.0V
V = 5.0V, V
= 2.0V
CC
CC
PIN
PIN
Table 2-0008/1016E
PARAMETER
Data Retention
MINIMUM
MAXIMUM
UNITS
Erase/Reprogram Cycles
20
10000
Years
Cycles




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