BDW47G datasheet(3/7 Pages) ONSEMI

Part #	BDW47G

Description	Darlington Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BDW42 − NPN, BDW46, BDW47 − PNP

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3

90

60

40

20

0

25

50

75

100

125

150

Figure 1. Power Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

80

70

50

30

10

Figure 2. Switching Times Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

3.0

0.7

0.5

0.3

0.2

0.05

0.2

0.3

0.7

3.0

10

td @ VBE(off) = 0 V

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

tf

0.07

1.0

5.0

ts

tr

0.1

1.0

2.0

0.5

2.0

7.0

0

VCC

− 30 V

SCOPE

TUT

+ 4.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25

ms

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V2

APPROX

+ 8.0 V

V1

APPROX

− 12 V

[ 8.0 k

[ 150

for td and tr, D1 id disconnected

and V2 = 0

For NPN test circuit reverse all polarities

RB

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1000

500

RqJC(t) = r(t) RqJC

RqJC = 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.03

0.3

3.0

30

300

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