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MBR3100 Datasheet(PDF) 1 Page - ON Semiconductor |
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MBR3100 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 4 page  © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 6 1 Publication Order Number: MBR3100/D MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Low Reverse Current • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • High Surge Capacity • Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current TA = 100°C (RqJA = 28°C/W, Refer to P.C. Board Mounting, Note 3) IO 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Operating and Storage Junction Temperature Range (Note 1) (Reverse Voltage Applied) TJ, Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10 V/ns Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping† ORDERING INFORMATION AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES, 100 VOLTS Preferred devices are recommended choices for future use and best overall value. MBR3100 Axial Lead 500 Units / Bag MBR3100RL Axial Lead 1500/Tape & Reel MARKING DIAGRAM A MBR 3100 YYWW G G http://onsemi.com MBR3100RLG Axial Lead (Pb−Free) 1500/Tape & Reel MBR3100G Axial Lead (Pb−Free) 500 Units / Bag †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. A = Assembly Location YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) |
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