MCR8S datasheet(1/5 Pages) ONSEMI

Part #	MCR8S

Description	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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Manufacturer	ONSEMI [ON Semiconductor]

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December, 2005 − Rev. 3

1

Publication Order Number:

MCR8S/D

MCR8SD, MCR8SM, MCR8SN

Preferred Device

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

Features

• Sensitive Gate Allows Triggering by Microcontrollers and other

Logic Circuits

• Blocking Voltage to 800 Volts

• On−State Current Rating of 8 Amperes RMS at 80°C

• High Surge Current Capability − 80 Amperes

• Rugged, Economical TO−220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

• Minimum and Maximum Values of IGT, VGT and IH Specified for

Ease of Design

• Immunity to dv/dt − 5 V/msec Minimum at 110°C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR8SD

MCR8SM

MCR8SN

VDRM,

VRRM

400

600

800

V

On-State RMS Current

(180

° Conduction Angles; TC = 80°C)

IT(RMS)

8.0

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, TJ = 110°C)

ITSM

80

A

Circuit Fusing Consideration (t = 8.33 ms)

I2t

26.5

A2sec

Forward Peak Gate Power

(Pulse Width

≤ 1.0 ms, TC = 80°C)

PGM

5.0

W

Forward Average Gate Power

(t = 8.3 ms, TC = 80°C)

PG(AV)

0.5

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 ms, TC = 80°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCRs

8 AMPERES RMS

400 thru 800 VOLTS

TO−220AB

CASE 221A−09

STYLE 3

1

http://onsemi.com

MARKING

DIAGRAM

A

= Assembly Location

Y

= Year

WW

= Work Week

x

= D, M, or N

G

= Pb−Free Package

AKA

= Diode Polarity

2

3

Device

Package

Shipping

ORDERING INFORMATION

MCR8SD

TO−220AB

50 Units / Rail

MCR8SN

TO−220AB

50 Units / Rail

MCR8SDG

TO−220AB

(Pb−Free)

50 Units / Rail

MCR8SNG

TO−220AB

(Pb−Free)

50 Units / Rail

Preferred devices are recommended choices for future use

and best overall value.

MCR8SM

TO−220AB

50 Units / Rail

MCR8SMG

TO−220AB

(Pb−Free)

50 Units / Rail

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

AY WW

MCR8SxG

AKA

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