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MJ11012 Datasheet(PDF) 2 Page - ON Semiconductor |
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MJ11012 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MJ11015 MJ11012 MJ11016 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) MJ11012 MJ11015, MJ11016 V(BR)CEO 60 120 — — Vdc Collector–Emitter Leakage Current (VCE = 60 Vdc, RBE = 1k ohm) MJ11012 (VCE = 120 Vdc, RBE = 1k ohm) MJ11015, MJ11016 (VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C) MJ11012 (VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C) MJ11015, MJ11016 ICER — — — — 1 1 5 5 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 5 mAdc Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO — 1 mAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 20 Adc,VCE = 5 Vdc) (IC = 30 Adc, VCE = 5 Vdc) hFE 1000 200 — — — Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) (IC = 30 Adc, IB = 300 mAdc) VCE(sat) — — 3 4 Vdc Base–Emitter Saturation Voltage (IC = 20 A, IB = 200 mAdc) (IC = 30 A, IB = 300 mAdc) VBE(sat) — — 3.5 5 Vdc DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 A, VCE = 3 Vdc, f = 1 MHz) hfe 4 — MHz (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%. |
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