© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 4

1

Publication Order Number:

MJ15001/D

MJ15001 (NPN),

MJ15002 (PNP)

Complementary Silicon

Power Transistors

The MJ15001 and MJ15002 are EpiBase

t power transistors

designed for high power audio, disk head positioners and other linear

applications.

Features

0.5 A @ 100 V

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

140

Vdc

Collector−Base Voltage

140

Vdc

Emitter−Base Voltage

5

Vdc

Collector Current − Continuous

15

Adc

Base Current − Continuous

5

Adc

Emitter Current − Continuous

20

Adc

Derate above 25

°C

200

1.14

W

W/

°C

Operating and Storage Junction

Temperature Range

–65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

0.875

°C/W

Maximum Lead Temperature for Soldering

Purposes 1/16

″ from Case for v 10 secs

265

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device

Package

Shipping

ORDERING INFORMATION

MJ15001

TO−204AA

100 Units/Tray

TO−204AA

20 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

140 VOLTS, 250 WATTS

MJ15002

TO−204AA

(Pb−Free)

MJ15002G

MJ15001G

TO−204AA

(Pb−Free)

100 Units/Tray

100 Units/Tray

100 Units/Tray

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

MJ1500x = Device Code

x = 1 or 2

G

= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

MJ1500xG

AYYWW

MEX