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MJE5852G Datasheet(PDF) 2 Page - ON Semiconductor

Part # MJE5852G
Description  8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5852G Datasheet(HTML) 2 Page - ON Semiconductor

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MJE5850, MJE5851, MJE5852
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MJE5850
MJE5851
MJE5852
Unit
Collector−Emitter Voltage
VCEO(sus)
300
350
400
Vdc
Collector−Emitter Voltage
VCEV
350
400
450
Vdc
Emitter Base Voltage
VEB
6.0
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
8.0
1 6
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
4.0
8.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
80
0.640
W
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25
_C/W
Maximum Lead Temperature for Soldering Purposes: 1/8
″ from
Case for 5 Seconds
TL
275
_C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
ORDERING INFORMATION
Device
Package
Shipping
MJE5850
TO−220
50 Units / Rail
MJE5850G
TO−220
(Pb−Free)
MJE5851
TO−220
MJE5851G
TO−220
(Pb−Free)
MJE5852
TO−220
MJE5852G
TO−220
(Pb−Free)


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